采用一种晶向性腐蚀方法，在（100）Si平面衬底上腐蚀得到一种非平面结构，经SiGeMBE外延后，从SEM照片上可以看出，SiGe外延层是一种量子点、线和阱的混合结构．非平面结构上的SiGe层的发光强度为平面结构上的8～10倍．从SiGe层内发出的发光强度占样品总发光强度的96％，且m≈1．1的值表明外延层的质量及时载流子的收集效率是高的．随着激发功率的增加，可以看到PL谱的蓝移． A kind of anisotropic etching method was used to etch a (100) Si planar substrate to obtain a non-planar structure. After SiGeMBE epitaxy, it can be seen from the SEM image that the SiGe epitaxial layer is a quantum dot, Well mixed structure. The SiGe layer on the non-planar structure has a luminous intensity of 8 to 10 times that of the planar structure. The luminous intensity emitted from the SiGe layer accounts for 96% of the total luminous intensity of the sample, and the value of m≈1.1 indicates that the quality of the epitaxial layer and the collection efficiency of the carrier in time are high. As the excitation power increases, we can see the blue shift of the PL spectrum.