阐述了一种测试功率MOSFET热阻的新方法。该方法选取漏源电流作为温度敏感参数,在相同漏源电压和栅源电压幅度下,当栅源电压条件由直流形式变为脉冲形式时,漏源电流是有差异的,这一差异是由结温的不同造成的。而脉冲栅源电压下环境温度的调整可以用来模拟直流条件下的结温,由此可以测得器件在直流条件下的热阻。该方法具有精度高、实现容易和操作方便等优点,可作为功率MOS器件结温和热阻的有效测试方法。 A new method of testing thermal resistance of power MOSFET is described. The method selects the drain-source current as the temperature-sensitive parameter, and the drain-source current is different when the gate-source voltage condition changes from the direct current form to the pulse form under the same drain source voltage and the gate-source voltage amplitude. This difference is caused by Different junction temperature caused. The adjustment of the ambient temperature under the pulse gate source voltage can be used to simulate the junction temperature in the DC condition, so that the thermal resistance of the device in the DC condition can be measured. The method has the advantages of high precision, easy implementation and convenient operation, and can be used as an effective test method for junction temperature and thermal resistance of power MOS devices.