硅基雪崩光电探测器的器件性能与倍增层的掺杂浓度有着密切联系。研究了硅基雪崩光电探测器倍增层的掺杂浓度对雪崩击穿电压和光谱响应度等特性的影响。在硼的注入剂量由5.0×1012 cm-2减小为2.5×1012cm-2时,倍增层内电场强度逐渐降低,吸收区电场强度迅速增大,器件的雪崩击穿电压由16.3V迅速上升到203V,而光谱响应在95%的击穿电压下,峰值响应波长由480nm红移至800nm,对应的响应度由11.2A/W剧增到372.3A/W。综合考虑光谱响应和雪崩击穿电压的影响,在硼注入剂量为3.5×1012 cm-2时,可获得击穿电压为43.5V和响应度为342.5A/W的器件模型,对实际器件的制备具有一定参考价值。 The device performance of Si-based avalanche photodetectors is closely related to the doping concentration of doubled layers. The influence of doping concentration of double layer of arsenic avalanche photodetector on characteristics such as avalanche breakdown voltage and spectral responsivity was studied. When the implantation dose of boron decreased from 5.0 × 1012 cm-2 to 2.5 × 1012 cm-2, the electric field intensity in the doubled layer gradually decreased and the field strength in the absorption region rapidly increased. The avalanche breakdown voltage of the device rapidly rose from 16.3V to 203V, while the spectral response at 95% breakdown voltage, the peak response wavelength red-shifted from 480nm to 800nm, the corresponding responsivity increased sharply from 11.2A / W to 372.3A / W. Considering the influence of spectral response and avalanche breakdown voltage, a device model with a breakdown voltage of 43.5V and a responsivity of 342.5A / W can be obtained at a boron implantation dose of 3.5 × 1012 cm-2. The actual device fabrication Has a certain reference value.