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一、前言 在半导体器件生产工艺中,硅片的清洗是一个相当重要的环节,对成品的合格率是有很大影响的。硅片上的污染可分为有机物、金属离子和金属原子等。对于硅片的清洗,一般使用腐蚀性较强的酸、碱等。本工作是采用无腐蚀性的表面活性剂,对硅片进行清洗。其清洗机理,主要是通过表面张力差异,去除液体的排代作用达到清洗的目的。我们从79年开始选用了多种表面活性剂进行多种实验,从而选出了合适的清洗剂。并在半导体器件的生产工艺中得到了验证。
First, the preface In the semiconductor device manufacturing process, silicon cleaning is a very important part of the finished product pass rate is a great influence. Silicon contamination can be divided into organic matter, metal ions and metal atoms. For the cleaning of silicon, the general use of corrosive acid, alkali and so on. This work is non-corrosive surfactant, the silicon cleaning. The cleaning mechanism, mainly through the surface tension differences, remove the liquid displacement effect to achieve the purpose of cleaning. We have been using a variety of surfactants for a variety of experiments since the beginning of the 79, and have chosen the right cleaning agent. And in the semiconductor device production process has been verified.