建立了一种析出模型用来模拟硼在硅中的扩散现象,描述了硼原子与离子注入引起的Rp缺陷之间的相互作用,解释了非活性硼峰形成的原因,与实验结果能够较好的吻合,为研究硼的扩散机理提供了很好的依据,为超浅结工艺模拟提供了基本模型,对于开发下一代集成电路研制的工艺模拟程序有着非常重要的意义。 A deposition model was developed to simulate the diffusion of boron in silicon. The interaction between boron atoms and the Rp defects caused by ion implantation was described. The reason for the formation of the inactive boron peak was explained, which was in good agreement with the experimental results , Which provides a good basis for the study of boron diffusion mechanism and provides the basic model for the simulation of ultra-shallow junction technology. It is of great significance for the development of process simulation program developed by the next generation of integrated circuits.