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采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为(111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM)分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20—60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C.(cm2.K)-1,可以满足制备非制冷红外探测器的需要.
The PLT ferroelectric thin films were grown on Pt / Ti / SiO2 / Si (100) substrates by RF magnetron sputtering.The crystallization properties of PLT films were investigated by X-ray diffraction (XRD) The results show that the PLT film is (111) preferred orientation perovskite phase structure.The surface topography and domain structure of the PLT films were observed by atomic force microscopy (AFM) and piezoelectric response force microscopy (PFM) It is observed that there is a 90 ° nano-banded domain in the PLT film, and the polarization of the domain is a low-energy arrangement with the domain width of 20-60nm. The preparation conditions and performance of the PLT10 ferroelectric thin film were studied. The results show that the PLT10 ferroelectric thin films prepared under the optimized conditions have a dielectric constant εr of 365, a dielectric loss tgδ of 0.02 and a pyroelectric coefficient γ of 2.18 × 10 -8 C. (cm 2 · K -1) , To meet the need to prepare uncooled infrared detectors.