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This paper proposes a new two dimensional(2D) analytical model for a germanium(Ge) single gate silicon-on-insulator tunnel field effect transistor(SG SOI TFET). The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design(TCAD) simulation results and also comparing them with results from a silicon based TFET.
This paper proposes a new two dimensional (2D) analytical model for a germanium (Ge) single gate silicon-on-insulator tunnel field effect transistor (SG SOI TFET). The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surface potential, the electric field of the innovation is used in the electric fields. The results show that the device out of the electric field. The results show that the device out of the electric fields. The results show that the device out of the electric fields. and also comparing with with with silicon from TFET.