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2.绝缘栅场效应管结缘栅型场效应管与结型场效应管的不同点在于它们的导电结构:结型场效应管是利用导电沟道之间耗尽层的宽窄来控制漏极电流,而绝缘栅型场效应管是利用感应电荷的多少来改变导电沟道的性质。绝缘栅型场效应管的结构是由金属—绝缘体—半导体三层材料构成的,目前应用最广泛的绝缘体是二氧化硅(SiO_2氧化物),故其结构又变为金属—氧化物—半导
2. Insulated gate FET junction FET and junction field effect transistor of the difference lies in their conductive structure: Junction FET is the use of conductive channels between the width of the depletion layer to control the drain current , And insulated gate field effect transistor is the use of the amount of induced charge to change the nature of the conductive channel. The structure of an insulated gate field effect transistor is made of a metal-insulator-semiconductor triple-layer material. At present, the insulator most widely used is silicon dioxide (SiO 2), and its structure has been changed to a metal-oxide-semiconductor