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在超高真空系统中 ,用扫描隧道显微镜 (STM)和原子力显微镜 (AFM)研究了自组织生长的 Ge量子点经不同温度退火后的变化 .实验发现 ,当退火温度为 6 30℃时 ,出现了许多新的量子点 .与原来的在分子束外延过程中形成的无失配位错的量子点相比 ,新形成的量子点被认为是存在位错的岛
In the ultra-high vacuum system, the changes of self-organized Ge quantum dots annealed at different temperatures were studied by scanning tunneling microscope (STM) and atomic force microscope (AFM) .It was found that when the annealing temperature was 6 30 ℃, A lot of new quantum dots.With the original in molecular beam epitaxy formed without misfit mismatched quantum dots compared to the newly formed quantum dots is considered to exist dislocation of the island