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近年来,各国科学家在用无定形硅膜制成的高效薄型光电器件方面,取得了显著的进展。但对决定器件性能的无定形硅膜的制备,至今一直采用硅烷(SiH_4)的等离子放电法或在氢气氛中溅射的方法。
In recent years, scientists from all over the world have made remarkable progress in using high-efficiency and thin-film optoelectronic devices made of amorphous silicon films. However, for the preparation of amorphous silicon films that determine device performance, the plasma discharge method using silane (SiH 4) or the sputtering method in a hydrogen atmosphere has been used until now.