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通过红外吸收测量、带电粒子活化分析及腐蚀后的金相观察,证实了经三步热处理退火后的CZ硅片,表面层氧外扩散而形成“清洁区”,体内氧沉淀形成高密度的缺陷区。采用中子活化、C-T测量、p-n结试验等技术,证实了氧本征吸除的吸杂效果。
Through the infrared absorption measurement, the activation analysis of charged particles and the metallographic observation after the corrosion, it was confirmed that the CZ wafers annealed by the three-step heat treatment formed a “clean zone” by oxygen diffusion on the surface layer, and oxygen deposition in the body formed high density defects Area. Adopting the techniques of neutron activation, C-T measurement and p-n junction test, it has been proved that the gettering effect of oxygen is aspiration.