In this work, enhanced poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulkheterojunction photovoltaic devices are achieved via sl
Morphology of nonpolar (1120) a-plane GaN epilayers on r-plane (1102) sapphire substrate grown by low-pressure metal-organic vapour deposition was investigated