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A voltage-controlled ring oscillator(VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor(HEMT) logic is proposed.An enhancement-mode HEMT(E-HEMT) is fabricated,whose threshold is demonstrated to be 10 mV.The model of the E-HEMT is established and used in the SPICE simulation of the VCO.The result proves that the full E-HEMT logic technology can be applied to the VCO.And compared with the HEMT DCFL technology,the complexity of our fabrication process is reduced and the reliability is improved.
A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs / InGaAs / InP high electron mobility transistor (HEMT) logic is proposed. An enhancement- mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And the compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.