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通过双生长室工艺研究了与GaAs晶格匹配的InGaP和GaAsP的氢化物VPE。论证了InGaP/GaAs超晶格结构生长的突变而很平坦的界面。用已成熟的氧引入技术的抑制附加壁淀积可精确地控制InGaAsP的合金成分和生长速率。可重复获得晶格匹配的、波长在7200～7800(?)间的镜面InGaAsP层。制成了第一个室温CW工作的InGaAsP/InGaP可见光激光二极管。
Hydride VPE of InGaP and GaAsP lattice-matched to GaAs was studied by dual-growth chamber technology. The abrupt and flat interface of the InGaP / GaAs superlattice structure is demonstrated. Suppression of additional wall deposition with established oxygen introduction techniques allows for precise control of the alloy composition and growth rate of InGaAsP. Lattice-matched, mirrored InGaAsP layers with wavelengths between 7200 and 7800 (?) Can be obtained repeatedly. Made the first room temperature CW work of InGaAsP / InGaP visible laser diode.