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采用脉冲激光技术在Pt/Ti/SiO2/Si衬底上沉积了非晶La2O3薄膜,制作并分析了Pt/La2O3/Pt堆栈层的直流电压与脉冲电压诱导的电阻转变特性。Pt/La2O3/Pt器件单元表现出了稳定的双极性电阻转变,其高低阻态比大于两个数量级。经过大于1.8×106s的读电压,高低阻态的电阻值没有明显的变化,表现出了良好的数据保持能力。通过研究高低阻态的电流电压关系、电阻值与器件面积的关系,揭示了导电细丝的形成和破灭机制是导致Pt/La2O3/Pt器件发生电阻转变现象的主要原因。
An amorphous La2O3 thin film was deposited on a Pt / Ti / SiO2 / Si substrate by pulsed laser technique. The DC voltage and pulse voltage induced resistance transformation of Pt / La2O3 / Pt stack were fabricated and analyzed. The Pt / La 2 O 3 / Pt device shows a stable bipolar resistance transition with high and low resistivity ratio of more than two orders of magnitude. After more than 1.8 × 106s read voltage, high and low resistance state resistance no significant change, showing a good data retention. The relationship between the current and voltage at high and low resistance states and the relationship between the resistance and the area of the device reveals that the formation and the breaking mechanism of the conductive filaments are the main reasons causing the resistance change of Pt / La2O3 / Pt devices.