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采用低压热壁化学气相沉积法,在6H-SiC衬底(0001)面上生长了不同温度(1100—1250℃),不同GeH4流量比(6.3%—25%)的SiCGe薄膜样品,研究了SiCGe薄膜的表面形貌、生长特性以及样品中Ge组分含量的变化.扫描电镜测试结果表明,SiCGe薄膜在低温下倾向于岛状生长模式,随着生长温度提高,岛状生长逐渐过渡到层状生长模式,同时伴有岛形状和密度的变化.X射线光电子能谱测试得出SiCGe样品中的Ge含量约为0.15%—0.62%,在其他参数不变的情况下,样品的Ge含量随GeH4流量比的增大而升高,随生长温度的降低而升高.此外还定性分析了样品中的反相边界(APB)缺陷.
SiCGe thin films with different temperature (1100-1250 ℃) and different GeH4 flow ratios (6.3% -25%) were grown on the (0001) 6H-SiC substrate by low pressure hot wall chemical vapor deposition. The surface morphology, growth characteristics and the content of Ge in the samples were analyzed by scanning electron microscopy (SEM). The results of SEM showed that the SiCGe films tended to grow island-like at low temperature. With the growth temperature increasing, the island- Growth pattern with the change of island shape and density.X-ray photoelectron spectroscopy test results show that the Ge content in SiCGe sample is about 0.15% -0.62%. Under the condition of other parameters, the Ge content of sample increases with the increase of GeH4 The ratio of flow rate increased and then increased with the decrease of growth temperature, and the reverse phase boundary (APB) defects in the samples were qualitatively analyzed.