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氧注入隔离(SIMOX:Separation by IMplanted OXygen)是绝缘层上形成单晶硅(SOI:Silicon onInsulator)结构的最有前途的技术。制备工艺简单,可获得绝缘层上高质量的单晶硅膜。由于SIMOX衬底与体材料硅相比有许多潜在的优点,如有较高的开关速度、较强的抗辐照能力和避免闭锁效应等,正受到人们越来越多的关注。SIMOX衬底上分子束外延生长GaAs或Si/Ge_(0.5)Si_(0.5)应变层超晶格薄膜,具有异质外延材料和SIMOX的全部优点。可把GaAs光电器件和硅集成电路集成在一块芯片上。SIMOX中氧化物埋层由氧离子注入单晶硅形成,注入能量为200kev,剂量为1.8×10~_(18)/cm~2。注入后试样在1300C干氮气氛中退火6小时,然后在SIMOX
SIMOX: Separation by IMplanted Oxygen is the most promising technology for forming a silicon on insulator (SOI) structure on an insulating layer. Preparation process is simple, available on the insulation layer of high-quality monocrystalline silicon film. Because SIMOX substrate has many potential advantages compared with bulk silicon, such as higher switching speed, stronger anti-radiation ability and avoidance of blocking effect, etc., are receiving more and more attention. The molecular beam epitaxial growth of GaAs or Si / Ge_ (0.5) Si_ (0.5) strain layer superlattice thin films on SIMOX substrate has all the advantages of heteroepitaxial material and SIMOX. GaAs optoelectronic devices and silicon integrated circuits can be integrated in a chip. The oxide buried layer in SIMOX is formed by oxygen ion implantation of single crystal silicon with an implantation energy of 200kev and a dose of 1.8 × 10 ~ (18) / cm ~ 2. After injection, the samples were annealed in a dry nitrogen atmosphere of 1300 C for 6 hours and then in SIMOX