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本文阐述了用ＲＢＳ／ｃｈａｎｎｅｌｉｎｇ技术研究异质外延ＧａＮ及其三元合金薄膜的重要性和必要性，报道了实验测量出的ＧａＮ及其三元合金ＡｌＧａＮ、ＩｎＧａＮ膜的结构，给出了较为准确的元素种类、成分配比、薄膜厚度、合金元素的浓度随深度的分布、结晶品质、晶轴取向等信息，测出了几种薄膜的背散射沟道谱与随机谱之比χｍｉｎ值（Ａｌ０．１５Ｇａ０．８５Ｎ的χｍｉｎ值可低至１．１７％）和沟道坑的半角宽Ψ１／２（ＧａＮ的半角宽为０．７４°），对于其他测试方法无法给定的中间层的情况及不同衬底对成膜的影响，本文亦有明确的说明．
This paper describes the importance and necessity of using RBS / channeling technology to study heteroepitaxial GaN and its ternary alloy films. The structure of GaN and its ternary AlGaN and InGaN films measured by experiments is reported, The ratio of the backscattering channel spectrum to the random spectrum, χmin (Al0 (subscript a)), was calculated by the information of species, composition, film thickness and concentration of alloying elements along the depth, crystal quality and crystal axis orientation. .15Ga0.85N χmin value can be as low as 1.17%) and the channel pit half-width Ψ1 / 2 (GaN half-width of 0.74 °), for other test methods can not be given the middle layer and The impact of different substrates on the film, this article also has a clear description.