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由于锑化铟材料的工艺成熟、生产率令人满意及其优良性能,使它能在中波长(2-5.4μm)的红外系统中被优先选用。只是在超过130K温度下,InSb才不如其他探测器材料。为了实现在大阵列制式中InSb探测器固有的高性能,必须设计出一种低噪声、使InSb与焦平面电子学隔离及适合特殊应用的速率要求的读出装置。为了获得最高性能,读出装置必须有一个以上的简易开关矩阵。讨论了转换积分器和缓冲共栅极输入电路,并将它与一创新的斩波器-稳定器电路作比较。稳定电路是使用了载流子调制技术,将探测器信号向上转换成较高的频率,其中MO-SFFT的1/f噪声很低。对质量不同的InSb探测器与为提高工作温度(>100K)的探测器阻抗匹配而专门设计的斩波器-稳定读出装置相接的焦平面性能作了预测。
As the indium antimonide material is matured, its productivity is satisfactory and its excellent properties make it preferred in medium wavelength (2-5.4 μm) infrared systems. Only in more than 130K temperature, InSb is not as good as other detector materials. In order to achieve the intrinsic high performance of InSb detectors in large array formats, a read-out device must be devised that is low-noise, isolates InSb from the focal plane electronics, and meets the speed requirements of particular applications. For maximum performance, the reader must have more than one simple switch matrix. The conversion integrator and buffered common-gate input circuit are discussed and compared with an innovative chopper-stabilizer circuit. The stabilization circuit uses carrier modulation techniques to up-convert the detector signal to higher frequencies, where the 1 / f noise of the MO-SFFT is low. A prediction was made of the focal plane performance of InSb detectors of different qualities connected to a chopper-stabilized readout specifically designed to increase the impedance of the detector at operating temperatures (> 100K).
