一、前言在以前的报道中,我们叙述了磷压法的一般工艺条件和初步结果。在文[1]的基础上,我们对磷压法作了较为深入的研究和改进。从制管结果看,发光效率又有所提高。本工作对磷压法生长的GaAs_(1-x)P_x材料进行较为全面的性能测试和制管分析,研究生长工艺条件与外延参数以及发光性能之间的关系,并由此确定最佳生长条件。磷压法以前采用过的掺杂方法是在镓源中加入掺碲的砷化镓片。此法操作不便,纯度欠高,制备 I. Preface In the previous report, we described the general process conditions and preliminary results of the PFC method. On the basis of [1], we made a more in-depth study and improvement on the PFC method. From the tube results, the luminous efficiency has increased. In this work, a comprehensive performance test and pipe analysis of GaAs_ (1-x) P_x material grown by the phosphorus method were carried out to study the relationship between growth process conditions, epitaxial parameters and luminescence properties, and to determine the optimum growth conditions . Phosphate pressure method used before the doping method is added gallium source doped tellurium gallium arsenide chip. This method is not easy to operate, low purity, preparation