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针对传统二氧化硅、氮化硅等介质材料在制作MOS电容时存在电容密度低、界面特性差的问题,通过对氮离子注入、氮硅氧化实验的分析,成功开发出一种采用注入氮并氧化制作氮氧化硅介质材料的工艺;并使用该工艺研制出与36V双极工艺兼容、介质的相对介电常数为5.51、击穿电压达81V、电容密度为0.394fF/μm~2的高密度MOS电容,较传统可集成二氧化硅/氮化硅复合介质电容的电容密度提高了35.86%。该工艺还可用于制作大功率MOSFET的栅介质,可提高器件的可靠性。
Aiming at the problems of low dielectric density and poor interfacial properties when traditional dielectric materials such as silicon dioxide and silicon nitride are used in the fabrication of MOS capacitors, the nitrogen and nitrogen oxide oxidation experiments have been successfully developed. Oxidation of silicon oxynitride dielectric material manufacturing process; and the use of the process developed with a 36V bipolar process compatible medium relative permittivity of 5.51, the breakdown voltage of 81V, the capacitance density of 0.394fF / μm ~ 2 high density MOS capacitor, compared with the traditional integrated silicon dioxide / silicon nitride composite dielectric capacitor capacitance increased by 35.86%. The process can also be used to fabricate gate dielectrics for high-power MOSFETs, improving device reliability.