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本文提出了采用有限元法分析SOI(Silicon on Insulator)结构M-Z(Mach-Zehnder)干涉型调制器的新方法。该方法在大截面单模SOI脊形波导理论的基础上,根据等离子体色散效应分析了这种调制器的电光调制机理;根据有限元法分析了p~+n结大注入时该调制器的电学性质,从而为实际研制成这种干涉型调制器打下了理论基础。
In this paper, we propose a new method to analyze the Mach-Zehnder interferometric modulator based on Silicon on Insulator (SOI) by finite element method. Based on the theory of single-mode SOI ridge waveguide with large cross-section, the electro-optic modulation mechanism of this modulator is analyzed based on the dispersion effect of plasma. According to the finite element method, Electrical properties, so as to actually develop into such an interferometric modulator laid the theoretical foundation.