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为了降低低压场终止型IGBT的工艺难度并改善其关断特性,对注氢场终止型IGBT(PFS-IGBT)的缓冲层进行了研究,引入了传统场终止型IGBT(FS-IGBT)和线性缓变掺杂场终止型IGBT(LFS-IGBT)来与PFS-IGBT作对比.PFS-IGBT的缓冲层通过多次注氢形成,从背面到内部的掺杂浓度依次降低,具有多个浓度峰值,厚度为20～30 μm.FS-IGBT的缓冲层掺杂浓度较高,厚度为5μm.LFS-IGBT的缓冲层从背面到内部的掺杂浓度呈线性降低,其厚度为20～30μm.采用Sentaurus TCAD对三种具有不同缓冲层结构的IGBT(600 V/40 A)的特性进行了分析.结果表明,PFS-IGBT通过控制注氢次数、剂量和能量可以获得最优的掺杂分布,器件性能与LFS-IGBT相当,比FS-IGBT拥有更平缓的电流关断波形和更强的短路坚固性.“,”In order to reduce the difficulty of ultrathin wafer process and improve the switching behavior of low voltage rated field stop IGBT(FS-IGBT),the buffer layer of proton implanted IGBT(PFS-IGBT) was proposed and studied emphatically.Another two kinds of layers were introduced to compare the characteristics.The buffer layer of PFS-IGBT had a thickness of 20 to 30 μm,formed by multiple injections of proton.It had a plurality of concentration peaks that decreased successively from the back to the inside of the chip.FS-IGBT had a buffer layer with a thickness less than 5 μm and a relatively high doping concentration.Linear-doping field stop IGBT(LFS-IGBT) had a 20-30 μm buffer layer with a linear concentration variation from the back to the inside of the chip.Based on 600 V/40 A trench IGBTs,characteristics of the IGBTs were analyzed.The results showed that PFS-IGBT could achieve an optimal doping file through adjusting the dose,energy and implantation number.It had more smoothly switched current waveforms and stronger short circuit robustness compared with the FS-IGBT.
