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通过理论分析和实验验证对多层带有微结构的硅硅直接键合技术进行了研究.采用的硅片表面活化处理方法是亲水湿法,采用的键合工艺流程是先将硅片在键合机中进行预键合,再使用退火炉进行高温退火.其中预键合参数对多层键合成功与否起到决定性的作用,为节约实验时间,针对3个主要预键合参数(温度、压力、时间)的选取进行了详细的正交实验分析.使用项目组自制的硅硅键合分析软件对键合片的红外图像进行处理分析,计算键合率.采用实验得到的最佳预键合工艺参数,多层键合的键合率达到了86.652 7%.
Through the theoretical analysis and experimental verification, the multilayer silicon-silicon direct bonding technology with microstructure was studied.The surface activation of the silicon wafer is hydrophilic wet method, the bonding process is the first silicon wafer in Bonding machine pre-bonding, and then use the annealing furnace for high temperature annealing.Which pre-bonding parameters on the success of multi-layer bonding plays a decisive role, in order to save the experimental time, for the three main pre-bonding parameters Temperature, pressure and time) were selected and analyzed in detail.Using silicon-silicon bonding analysis software made by the project team, the infrared images of the bonding sheets were processed and analyzed to calculate the bonding rate.The best Pre-bonding process parameters, multi-layer bonding of the bonding rate reached 86.652 7%.