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据《Semiconductor FPD World》2006年第10期报道,日立制作所中央研究所成功开发了应用于IP光通信网络的以GaInNAs为有源层的半导体激光器,在直接调制方式(无需外部调制器)下实现了40G bit/s的高速工作。40G bit/s工作时的阈值电流仅为4.4mA。由于可在超高速下直接调制,该器件
According to the report of “Semiconductor FPD World” 2006, the Central Institute of Hitachi has successfully developed a GaInNAs active semiconductor laser for IP optical communication network. In the direct modulation mode (without external modulator) Achieved 40G bit / s high-speed work. The threshold current at 40G bit / s operation is only 4.4mA. The device can be modulated directly at very high speeds