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p-型ZnO材料因在紫外光电器件方面的潜在应用价值而受到人们的广泛关注。采用反应电子束蒸发法在白宝石上生长了ZnO:Ag薄膜,生长温度范围从150~250°C。研究表明:在该温度范围生长的ZnO:Ag薄膜具有n-型导电特征,但通过退火可以实现p-型导电。当退火温度为300°C时,ZnO:Ag薄膜的空穴浓度为2.8×1016 cm-3,电阻率为1.0 kΩ.cm,空穴的迁移率为0.22 cm2/V.s。当在350°C下进一步退火,薄膜仍为p-型导电,但空穴浓度减小为2.1×1015 cm-3,电阻率增大到5.0 kΩ.cm。通过对ZnO:Ag薄膜的X射线衍射谱分析发现,ZnO:Ag电学性质的变化与薄膜中Ag+替代Zn2+的浓度有关。
The p-type ZnO materials have drawn much attention due to their potential applications in UV optoelectronic devices. ZnO: Ag films were grown on white sapphire by reactive electron beam evaporation at a growth temperature ranging from 150 to 250 ° C. Studies have shown that ZnO: Ag films grown in this temperature range have n-type conductivity, but p-type conductivity can be achieved by annealing. When the annealing temperature is 300 ° C, the ZnO: Ag film has a hole concentration of 2.8 × 10 16 cm -3, a resistivity of 1.0 kΩ · cm and a hole mobility of 0.22 cm 2 / V.s. When further annealed at 350 ° C, the film is still p-type conductive, but the hole concentration decreases to 2.1 × 10 15 cm -3 and the resistivity increases to 5.0 kΩ.cm. Through the X-ray diffraction analysis of ZnO: Ag films, it is found that the change of the electrical properties of ZnO: Ag is related to the concentration of Ag + instead of Zn2 + in the film.