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Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 V.The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured.An extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China.
Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond. DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA / mm at a gate-source voltage of 6 V, and a Maximum transconductance of 20 mS / mm at a gate-source voltage of 1.5 V. The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured. An ex extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained, which was the first report on diamond MESFETs with RF characteristics in China.