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作为第三代半导体材料的典型代表,宽禁带半导体氮化镓(GaN)材料具有许多硅材料所不具备的优异性能,是高频、高压、高温和大功率应用的优良半导体材料,无论在民用或是军事领域都具有广阔的应用前景。随着GaN技术的进步,大直径硅(Si)基GaN外延技术逐步成熟并向商用化方向发展。2010年以来,多家国际著名半导体厂商相继推出GaN功率晶体管器件。与硅半导体功率器件一样,合理的驱动方式也是GaN功率晶体管优越性能得以体现的重要保障。本文将以GaN功率器件在同步整流Buck变换器中的应用为例,提出一种三电平的驱动方式,以充分发挥GaN功率晶体管器件的优越性。实验结果表明,本文提出的三电平驱动方式可以有效提高变换器的效率。
As a typical representative of the third generation of semiconductor materials, wide band gap semiconductor gallium nitride (GaN) materials with many outstanding properties of silicon materials, high frequency, high pressure, high temperature and high power applications, excellent semiconductor materials, both in Civil or military areas have broad application prospects. With the advancement of GaN technology, large-diameter silicon (Si) -based GaN epitaxy technology has gradually matured and has been commercialized. Since 2010, a number of internationally renowned semiconductor manufacturers have introduced GaN power transistor devices. As with silicon semiconductor power devices, a reasonable driving method is also an important guarantee for the superior performance of GaN power transistors. In this paper, GaN power devices in the synchronous rectifier Buck converter applications, for example, proposed a three-level drive mode to give full play to the superiority of GaN power transistor devices. Experimental results show that the proposed three-level drive mode can effectively improve the efficiency of the converter.