本文介绍了用电化学腐蚀的阳极氧化工艺，在硅衬底上制备多孔硅（ＰＳ）薄膜，实验测定了多孔硅薄膜的光致发光谱（ＰＬ），发现光致发光谱峰值波长随阳极氧化时间、ＨＦ浸泡时间或置于空气中自然氧化时间增加而向短方向移动（“蓝移”）．文章用量子限制效应（ＱＣＥ）理论解释了上述实验结果，并提出了在多孔硅发光机制中还存在表面态及实物质在发光中的作用。 In this paper, the electrochemical oxidation of anodic oxidation process was used to prepare porous silicon (PS) film on silicon substrate. The photoluminescence (PL) of porous silicon film was measured experimentally. It was found that the peak wavelength of photoluminescence peak Time, HF immersion time, or natural oxidation time placed in the air moves in the short direction (“blue shift”). In this paper, the quantum confinement effect (QCE) theory is used to explain the above experimental results, and the role of surface states and the emission of real material in the porous silicon light-emitting mechanism is also proposed.