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已经制成气相生长的结型In_(1-x)Ga_xP激光二极管。在80°K下能发出波长为6105A的相干光,其阀值电流密度为4000～6000A/cm~2。这是至今报导的半导体 p—n结发出波长最短的激光,也是发射橙色相干光的首例。由气相生长法制成的In_(1-x)Ga_xP发光二极管在室温下发出橙光和红光,其外量子效率超过0.1％。
Vapor-grown junction-type In_ (1-x) Ga_xP laser diodes have been fabricated. Coherent light with a wavelength of 6105A can be emitted at 80 ° K with a threshold current density of 4000-6000 A / cm2. This is the first report of semiconductor p-n junctions that emit the shortest wavelength laser and the first of its kind to emit orange coherent light. The In_ (1-x) Ga_xP LED made by the vapor growth method emits orange light and red light at room temperature, and its external quantum efficiency exceeds 0.1%.