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本文提出了用线性余因子差分亚阈电压峰测量电应力诱生MOSFET界面陷阱的新技术并进行了实验验证 .详细介绍了该方法的基本原理和实验实现 ,得到了电应力诱生MOSFET界面陷阱和累积应力时间的关系 .该方法具有普适性 ,可用于MOSFET的一般可靠性研究和寿命预测 .
In this paper, we propose a new technique to measure the trap of electrical stress inducing MOSFET interface by using linear residual-factor differential sub-threshold voltage peak and verify the experimental results.The basic principle and experimental realization of this method are introduced in detail.The electric stress inducing MOSFET interface trap And cumulative stress time.The method is universal and can be used for general reliability research and life prediction of MOSFET.