采用光加热低压金属有机化学气相淀积方法成功地制备出高质量的、组分均匀的AlGaN外延层。结果表明 ,铝和镓的并入效率基本相等 ,这有别于其他研究报道。此外 ,建立了铝相对镓的并入效率与气相预反应之间的关系模型 ,它表明 ,光加热对预反应有较大的影响。结合GaN的生长可以看出 ,光加热有利于抑制预反应 ,从而有利于提高样品质量和铝组分的均匀性。 The AlGaN epitaxial layer with high quality and uniform composition was successfully prepared by light-heated low-pressure metal-organic chemical vapor deposition. The results show that aluminum and gallium incorporation efficiency is basically equal, which is different from other studies. In addition, a model of the relationship between the incorporation efficiency of aluminum relative gallium and the gas phase pre-reaction was established, which shows that light heating has a greater influence on the pre-reaction. Combining with the growth of GaN, it can be seen that light heating is good for inhibiting the pre-reaction, which helps to improve the sample quality and the homogeneity of the aluminum components.