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本文采用晶圆级微纳加工技术,基于硅衬底氮化镓晶圆,提出并制备了同质集成发射极、集电极和基极的可见光互联芯片。利用In Ga N/Ga N量子阱二极管器件发光探测共存的特性,芯片的发射极和集电极采用相同的量子阱结构,并通过相同的制备工艺实现。发射极和集电极之间通过悬空的光波导连接,实现器件之间的光互联。同质集成可见光互联芯片集成两个共基极的光致晶体管,实现芯片内可见光的发射、传输和探测功能。该可见光互联芯片可以广泛应用于光致类脑神经形态芯片、芯片内可见光通信、智能显示、微纳成像及光传感等领域。
In this paper, wafer-level micro-nano processing technology, based on silicon substrate gallium nitride wafer, proposed and prepared homogeneously integrated emitter, collector and base of the visible light interconnect chip. Using In Ga N / Ga N quantum well diode device luminescence detection coexistence characteristics, the emitter and collector of the chip using the same quantum well structure, and through the same preparation process. The emitter and the collector are connected by a suspended optical waveguide to achieve optical interconnection between the devices. Homogeneous integration of visible light interconnect chip integrated two common-base phototransistor to achieve the chip’s visible light emission, transmission and detection. The visible light interconnection chip can be widely used in the field of photo-induced brain morphological chip, in-chip visible light communication, intelligent display, micro-nano imaging and light sensing.