论文部分内容阅读
对于光传感应用而言，波长达到或超过２μｍ的光电探测器是有益的。目前以砷化铟镓（ＩｎＧａＡｓ）为基础的探测器呈现很大暗电流，不适合雪崩光电二极管之类的强电场器件。现在，普林斯顿大学的研究人员已发展一种制作理论上能探测到２．１μｍ波长的雪崩光电二极管技术。带
Photodetectors with wavelengths up to or beyond 2 [mu] m are beneficial for light sensing applications. Current InGaAs-based detectors exhibit large dark current and are not suitable for strong electric field devices such as avalanche photodiodes. Now, researchers at Princeton University have developed an avalanche photodiode technology that can theoretically detect wavelengths of 2.1 μm. band