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Nd:YAG连续激光辐照在表面蒸有Zn薄膜的n-InP片上,用激光诱导的方法实现Zn在InP中掺杂。形成PN结。用电化学C-V方法和扫描电子显微镜对辐照后的样品进行分析研究,给出激光辐照功率、辐照时间等工艺参数对结深、浓度分布影响.在n-InP片表面得到受主浓度分布均匀、高掺杂（～1019cm-3）、浅结（～1μm）的P-InP。初步分析其掺杂机理是激光诱导下所形成的合金结过程。
Nd: YAG continuous laser irradiation on the surface of the steamed Zn film n-InP chip, using laser-induced Zn doped InP. Form a PN junction. Electrochemical CV method and scanning electron microscopy were used to analyze the irradiated samples, and the effects of laser irradiation power, irradiation time and other process parameters on the junction depth and concentration distribution were obtained.At the n-InP surface, Distributed, highly doped (~ 1019cm-3), shallow junction (~ 1μm) P-InP. The preliminary analysis of the doping mechanism is laser-induced alloy knot formed under the process.