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采用一步水热法制备出了掺杂铟和未掺杂的球花状SnO2纳米结构。通过扫描电子显微镜(SEM)、X射线粉末衍射(XRD)等手段对所得样品的形貌及晶体结构进行了表征,结果表明制得的SnO2纳米结构由厚度约30nm的纳米片组成,晶型为四方金红石型。以掺杂铟和未掺杂的SnO2样品制作了旁热式气敏元件,用于测试样品对乙醇气体的气敏性能。测试结果显示铟的掺入提高了SnO2样品的灵敏度,同时降低了气敏元件的最佳工作温度。最后,提出了铟掺杂提升SnO2纳米材料的气敏性能的可能机制。
One-step hydrothermal method was used to prepare indium-doped and undoped globular SnO2 nanostructures. The morphology and crystal structure of the obtained samples were characterized by scanning electron microscopy (SEM) and X-ray powder diffraction (XRD). The results show that the prepared SnO2 nanostructures consist of nanosheets with a thickness of about 30 nm and the crystal form is Quartet rutile. By-doped indium and undoped SnO2 samples prepared by-heating gas sensor, used to test samples of ethanol gas gas sensitivity. The test results show that the incorporation of indium improves the sensitivity of the SnO2 sample while reducing the optimum operating temperature of the gas sensor. Finally, the possible mechanism of indium doping to improve the gas sensing properties of SnO2 nanomaterials was proposed.