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在分析晶闸管通态压降产生的机理的基础上， 从协调开关时间与通态压降关系入手提出了采用双束质子辐照晶闸管。对ＫＫ２００Ａ 半成品晶闸管进行能量３．５ＭｅＶ 和５．０ＭｅＶ 注量为２．５×１０１１ｐ／ｃｍ ２ 的单束质子辐照晶闸管所得的晶闸管的电学参数与先用５．０ＭｅＶ 后用３．５ＭｅＶ 能量注量都为２．５×１０１１ｐ／ｃｍ ２ 的双束质子辐照的晶闸管所得的电学参数进行了对比， 发现双束质子辐照不仅能有效地缩短晶闸管的开关时间， 而且在降低快速晶闸管的通态压降方面比单束质子辐照的晶闸管优越
Based on the analysis of the mechanism of the thyristor on-state voltage drop, a double-beam proton irradiation thyristor was proposed based on the relationship between the on-time and the on-state voltage drop. The electrical parameters of the thyristor obtained from a single-beam proton-irradiated thyristor having energy of 3.5 MeV and 5.0 MeV of 2.5 × 10 11 p / cm 2 for the KK200A semifinished thyristor were the same as those of the thyristor obtained from the 3.5 MeV energy injection The results show that the two-beam proton irradiation can not only effectively shorten the switching time of the thyristor, but also reduce the voltage drop of the thyristor State pressure drop than single-beam proton irradiated thyristor superior