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拓扑绝缘体是近年来发现的一类新的量子材料,已成为凝聚态物理的研究热点领域.厚度仅几纳米的拓扑绝缘体薄膜不但具有奇特的物理性质,而且还是拓扑绝缘体应用于平面器件的基础.文章以Bi2Se3为例,介绍了Bi2Se3家族拓扑绝缘体薄膜的分子束外延生长以及其能带、自旋结构和拓扑性质随层厚的演化.这些结果为人工调控拓扑绝缘体的电子结构和物理性质提供了指导.
Topological insulator is a new kind of quantum material discovered in recent years, and has become a hot research field of condensed matter physics. Topological insulator thin film with thickness of only a few nanometers not only has peculiar physical properties, but also is the foundation of topological insulator used in planar devices. Taking Bi2Se3 as an example, the molecular beam epitaxial growth and the evolution of its energy band, spin structure and topological properties with the thickness of the Bi2Se3 family of topological insulator films are introduced.These results provide the theoretical basis for the manual control of the electronic structure and physical properties of the topological insulator guide.