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通过局域注氧工艺 ,在同一管芯上制作了 DSOI、体硅和 SOI三种结构的器件 .通过测量和模拟比较了这三种结构器件的热特性 .模拟和测量的结果证明 DSOI器件与 SOI器件相比 ,具有衬底热阻较低的优点 ,因而 DSOI器件在保持 SOI器件电学特性优势的同时消除了 SOI器件严重的自热效应 .DSOI器件的衬底热阻和体硅器件非常接近 ,并且在进入到深亚微米领域以后能够继续保持这一优势 .
Through the local oxygen injection process, three devices of DSOI, bulk silicon and SOI are fabricated on the same die.The thermal characteristics of the three devices are compared by measurement and simulation.The simulation and measurement results show that the DSOI devices and Compared with SOI devices, SOI devices have the advantage of lower thermal resistance, so DSOI devices eliminate the self-heating effect of SOI devices while maintaining the electrical characteristics of SOI devices.The substrate thermal resistance of DSOI devices is very close to that of bulk silicon devices, And continue to maintain this advantage after entering the deep sub-micron area.