论文部分内容阅读
以BSIM4模型为基础,从沟道电荷密度、有效源漏电压、载流子速度饱和及阈值电压等几个方面出发,找出BSIM4模型中导致不对称的因素,给出了对称的沟道电荷密度公式、源漏有效电压公式和载流子速度饱和公式;同时通过在源端和漏端分别计算的方法,抵消源/漏电压处理方式不同所带来的不对称性;最后推导出新的对称的沟道电流公式.模型验证表明:改进后的模型不但可以准确地模拟器件的特性,而且拥有更高的对称性.改进模型拓宽了BSIM4模型的运用范围,可以更有效地运用于RF集成电路设计和仿真.
Based on the BSIM4 model, the factors leading to asymmetry in the BSIM4 model are derived from the charge density of the channel, the effective source-drain voltage, the saturation of the carrier speed and the threshold voltage. The symmetric channel charge Density formula, source and drain effective voltage formula and carrier velocity saturation formula; At the same time by the source and the drain separately calculated method to offset the source / drain voltage difference caused by the different asymmetry; finally derived new Symmetrical channel current formula.Model verification shows that the improved model can not only accurately simulate the characteristics of the device, but also have a higher symmetry.The improved model to broaden the scope of BSIM4 model can be more effectively used in RF integration Circuit Design and Simulation.