在目前CMOS器件研制中,由于采用离子注入工艺,使阈电压的调整变的简单易行。在栅氧化膜形成后,通过薄的栅氧化层进行沟道区域注入,然后经过适当退火,便能达到目的。本文结合我室研制的HV.PMOS等电路,在60KeV能量的离子束注入机上,就注入能量和剂量对阈电压的影响,加以说明。 一、注入能量对阈电压的影响 沟道注入必须较严格地注意注入的能量值,因为沟道注入是在做好栅氧化膜后进行的。对于一定的注入剂量,如果能量过份低,则注入离子穿不过栅氧化层,阈电压不变。随着注入能 In the current development of CMOS devices, due to the use of ion implantation process, the threshold voltage adjustment becomes easy. After the gate oxide film is formed, the channel region is filled with a thin gate oxide and then properly annealed. In this paper, I developed room HV.PMOS and other circuits, 60KeV energy ion beam implanter, on the injection of energy and dose on the threshold voltage, to illustrate. First, the impact of the injection of energy on the threshold voltage Channel injection must pay more attention to the injected energy value, because the channel implantation is done after the gate oxide film. For a certain injection dose, if the energy is too low, then the ion implantation through the gate oxide layer, the threshold voltage unchanged. With injection energy