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硅基互补型金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)场效应晶体管工艺已经发展到了14 nm技术节点,预计将很快到达其极限,需要寻找新的信息器件来延续摩尔定律.由于具备超小尺寸、高迁移率等显著优点,碳纳米管被认为是后摩尔时代最有潜力替代硅作为晶体管沟道的纳米材料之一.经过近20年的研究,基于碳纳米管场效应晶体管的技术已经取得了巨大的进步.本文将回顾碳纳米管场效应晶体管领域的关键性技术,包括N型欧姆接触实现、“无掺杂”CMOS技术、自对准顶栅结构以及尺寸缩减技术等.而且我们将分析碳纳米管晶体管在大规模材料制备以及碳管和电极接触方面存在的问题,并提出可能的解决方案.在此基础上,通过分析实验数据和模拟结果,对碳纳米管电子学的未来发展做出预测和展望,结果表明碳纳米管晶体管的潜力巨大,通过对材料和器件结构进行合理优化,碳纳米管晶体管在性能上可能远远超过硅基半导体对应技术节点的晶体管,成为后摩尔时代极其具有竞争力的信息器件.
Complementary Metal Oxide Semiconductor (CMOS) field-effect transistor technology has evolved to the 14 nm technology node and is expected to reach its limit soon, requiring the search for new information devices to continue Moore’s Law. Small size, high mobility and other significant advantages, carbon nanotubes is considered to be the most potential post-Moore era to replace silicon as one of the transistor channel nanomaterials.After nearly 20 years of research, based on carbon nanotube field effect transistor technology Has made great strides.This article reviews key technologies in the field of carbon nanotube field effect transistors, including N-type ohmic contact implementations, “undoped” CMOS technology, self-aligned top gate structures, and size reduction techniques And we will analyze the problems of carbon nanotube transistors in the preparation of large-scale materials and the contact between carbon nanotubes and electrodes, and propose possible solutions.On the basis of analyzing the experimental data and simulation results, The future development of science to make forecasts and prospects, the results show that carbon nanotube transistors have great potential, through the materials and devices Reasonable structure optimization, the carbon nanotube transistors in transistor performance may far exceed the corresponding silicon-based semiconductor technology node, information devices Houmo Er age become extremely competitive.