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传统分子束外延(MBE)技术是不能生长含磷化合物的,原因在于通常情况下磷会带来很高的饱和蒸气压,使得生长难于控制。近几年来兴起的全固源MBE技术结合了裂解技术、阀门机制、“三温度区”结构及原位产生白磷的思想,它解决了传统MBE难以生长含磷材料的难题,与气源(GS)MBB和有机金属气相外延(MOCVD)相比,在成本和安全性方面具有优势,成为极具发展潜力的新一代外延生长技术。利用全固源MBE技术可生长高性能半导体光电子材料,尤其是InGaAsP系材料,其器件性能达到或超过了MOCVD、GSMBE生长的同类器件的最佳水平。
Conventional molecular beam epitaxy (MBE) technology is unable to grow phosphorus-containing compounds, as phosphorus typically imposes very high saturation vapor pressures, making growth difficult to control. The all-solid MBE technology that has emerged in recent years combines the cracking technology, the valve mechanism, the “three-temperature zone” structure and the idea of producing white phosphorus in situ. It solves the difficult problem that traditional MBE is difficult to grow phosphorus- ) Compared with MOCVD, MBB has advantages in terms of cost and safety and becomes a new generation of epitaxial growth technology with great potential for development. The use of all solid-source MBE technology can grow high-performance semiconductor optoelectronic materials, especially InGaAsP-based materials, the device performance to meet or exceed the MOCVD, GSMBE growth of similar devices the best level.