论文部分内容阅读
本文研完了不同含磷量x的三元半导体n-GaAs_(1-x)P_x作为光阳极的光电化学行为。测定了光电化学电池n-GaAs_(1-x)P_x|0.87M NaOH-0.87MS-0.87MN a_2S|Pt在氮气氛中,当钨带灯作光源光强为35.2mW/cm~2时的开路电压V_(oc)和短路光电流密度J_(sc)。测得不同x光阳极的极化曲线和光电转换效率。 当电池以光电流为10μA/cm~2和100μA/cm~2进行恒电流放电时,光电位较稳定。考察了不同x光阳极的稳定性。并作了不同含磷量x的n-GaAs_(1-x)P_x半导体电极的光谱响应,测得不同x材料的波长响应范围和直接禁带宽度。
In this paper, the photoelectrochemical behavior of ternary semiconductors n-GaAs_ (1-x) P_x with different phosphor content x was studied. The open circuit of n-GaAs_ (1-x) P_x | 0.87M NaOH-0.87MS-0.87MN a_2S | Pt in the photoelectrochemical cell was measured when the intensity of the tungsten lamp was 35.2mW / cm ~ 2 Voltage V oc and short-circuit photocurrent density J sc. Polarization curves and photoelectric conversion efficiencies of different x-ray anodes were measured. When the battery photocurrent to 10μA / cm ~ 2 and 100μA / cm ~ 2 constant current discharge, the photoelectric potential is more stable. The stability of different x-ray anodes was examined. The spectral response of n-GaAs_ (1-x) P_x semiconductor electrodes with different phosphor content x was measured and the wavelength response range and direct band gap of different x materials were measured.