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采用热蒸镀膜方法,在制备出As_2S_3、As_2Se_3、GeS_2、GeSe_2、Ge_(20)As_(25)S_(55)、Ge_(20)As_(25)Se_(55)和Ge_(10)As_(40)S_(20)Se_(30)七个体系硫系非晶态半导体薄膜的基础上,运用X射线粉末衍射、扫描电镜、透射电镜和吸收或透射光谱等测试手段,系统地探讨了薄膜在氩离子激光辐照作用下的光致暗化、光致漂白和光致结晶等光致效应及机理。在As_2S_3、As_2Se_3和Ge_(10)As_(40)S_(20)Se_(30)薄膜中观察到明显的光致暗化效应,而在GeS_2、GeSe_2、Ge_(20)As_(25)S_(55)和Ge_(20)As_(25)Se_(55)薄膜中则观察到明显的光致漂泊效应。经氩离子激光辐照后,在薄膜中均观察到明显的光致结晶现象。
As2S3, As2Se3, GeS2, GeSe2, Ge20 As25S55, Ge20 As25 Se55 and Ge10 Ge40 were prepared by thermal evaporation method. ) S_ (20) Se_ (30) seven systems of sulfur-based amorphous semiconductor films based on the use of X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy and absorption or transmission spectroscopy and other testing methods, Photoinduced effect and mechanism of photo-darkening, photobleaching and photo-crystallization under the action of ion laser irradiation. The photodarkening effect was observed in As_2S_3, As_2Se_3 and Ge_ (10) As_ (40) S_ (20) Se_ (30) thin films and in the GeS_2, GeSe_2, Ge_ (20) As_ (25) S_ ) And Ge_ (20) As_ (25) Se_ (55) films, a significant photodarkening effect was observed. After argon ion laser irradiation, obvious photo-crystallization phenomenon was observed in the film.