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引言近几年来,代替 CRT 的各种显示器件得到了开发,如液晶显示器件(LCD)、等离子体显示板(PDP)、电致变色显示器件(ECD)等等。LCD 是最有希望的一种器件,因为它重量轻、功耗低、薄型。利用薄膜晶体管(TFT)的有源矩阵选址 LCD 板得到了广泛的研究。尤其是氢化非晶硅(a-Si:H)被广泛用于 TFT 的半导体层,这是由于它的沉积温度低、容易形成大的面积且化学稳定性好。但是,a-Si:HTFT 也有下述一些缺点:
Introduction In recent years, various display devices, such as liquid crystal display devices (LCDs), plasma display panels (PDPs), electrochromic display devices (ECDs), and the like, have been developed as substitutes for CRTs. LCD is the most promising device, because of its light weight, low power consumption, thin. An active matrix-based LCD panel using thin film transistors (TFTs) has been studied extensively. Hydrogenated amorphous silicon (a-Si: H), in particular, is widely used for the semiconductor layer of a TFT due to its low deposition temperature, easy formation of large area, and good chemical stability. However, a-Si: HTFT also has some disadvantages as follows: