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Cree最新研制的1200 V Z-FET器件可为应用于太阳能、电源和汽车驱动的SiC MOSFET节省3-10 kW的能量。Cree在其行业第一的Z-FET~(TM)家族中扩充了新产品——1200 V小电流SiCMOSFET,为功率电子设计工程师提供了一个提高大体积功率转换器效率的途径。新MOSFET器件补充了Cree现有的1200 V SiC MOSFET产品,额定电流更小,使其以低廉的价格得到更广泛的应用,或用于同时优化系统的价格和性能。该新器件可用于替代3-10 kW功率变换器中现用的SiIGBT。该公司表示,
Cree’s newly developed 1200 V Z-FET devices save 3-10 kW of energy for SiC MOSFETs used in solar, power and automotive applications. Cree has expanded its new product line, the industry’s # 1 Z-FET ™ family, with a low-current, 1200-V SiCMOSFET to provide power electronics designers with a way to increase the efficiency of bulky power converters. The new MOSFET device complements Cree’s existing 1200 V SiC MOSFET products for lower current ratings, enabling them to be more widely used at a lower cost, or to optimize system price and performance. This new device can be used to replace the existing SiIGBT in 3-10 kW power converters. The company said,