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本文在有效质量近似下,通过自洽地求解薛定鄂方程及泊松方程计算了在温度T=273 K,磁感应强度B=25 T,Si均匀掺杂的GaAs/AlGaAs量子阱系统的电子态结构.研究了温度与外磁场对子带能量,本征包络函数,自洽势,电子密度分布,及费米能量的影响.发现在给定磁感应强度B=fi0下,随温度升高子带能量单调增加,费米能量单调递减,自洽势的势阱变深变陡,电子密度分布变宽,峰值降低;在给定温度下,随磁感应强度的增加子带能量及费米能量单调递增,自洽势阱变浅变宽,电子密度分布变窄,峰值升高.
In this paper, the electronic structure of the GaAs / AlGaAs quantum well system with uniformly doped Si at T = 273 K and B = 25 T is calculated by the self-consistent solution of Schrödinger’s equation and Poisson’s equation. The effects of temperature and external magnetic field on the energy of subbands, intrinsic envelope function, self-consistent potential, electron density distribution and Fermi energy were investigated. It is found that with the increase of temperature Monotonically increasing, the monotonous Fermi energy decreases, the potential well in the self-consistent potential becomes deeper and steeper, the electron density distribution broadens and the peak value decreases. At a given temperature, the energy of the subband and the Fermi energy monotonically increase with the increase of the magnetic flux density, The self-consistent wells become narrower and narrower, the electron density distribution becomes narrower and the peak value increases.