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通过对不同氧化层厚度的 N- MOSFET在各种条件下加速寿命实验的研究 ,发现栅电压漂移符合 Weibull分布 . Weibull分布统计分析表明 ,5 .0、 7.0和 9.0 nm器件在 2 7和 10 5℃下本征失效的形状因子相同 ,即本征失效的失效机制在高低温度下相同 .非本征失效的比例随温度升高而增大 .在此基础上得出平均寿命 (t50 )与加速电场E成指数关系 ,进而提出了器件的寿命预测方法 .此方法可预测超薄栅 N- MOSFET在 FN应力下的寿命
Through the study of accelerated life test of N-MOSFET with different oxide thickness under various conditions, the gate voltage drift is found to be in accordance with the Weibull distribution. The statistical analysis of Weibull distribution shows that at 5.0, 7.0 and 9.0 nm, ℃, the shape factor of intrinsic failure is the same, that is, the failure mechanism of intrinsic failure is the same at high and low temperature.The proportion of extrinsic failure increases with the increase of temperature, on the basis of which the average life expectancy (t50) and acceleration The exponential relationship of the electric field E, and then put forward the device life prediction method.This method can predict the ultra-thin gate N-MOSFET under FN stress life