论文部分内容阅读
功率半导体国际整流器公司(International Rectifier,简称 IR)近日推出全新IRF6607 DirectFET MOSFET,专用于高频同步降压转换器中的同步 MOSFET 开关。全新的30 V IRE6607器件采用业界首个双面冷却 SMT 封装,可在 SO—8占位上大大降低传导和开关损耗。降压转换器采用两个 IRF6607 DirectFET MOSFET,便可在2 MHz 频率下提供每相30 A 的电流,效率高达77%,电流输出是业内最佳的SO—8封装 MOSFET 的两倍。为高频操作确立了全新的效率和功率密度基准,为设计人员提供独特的分立式方案。将推动新一代英特尔及 AMD 微处理器实现更大功率效益。
Power Semiconductor International Rectifier (IR) recently introduced the new IRF6607 DirectFET MOSFET specifically designed for synchronous MOSFET switching in high frequency synchronous buck converters. The new 30 V IRE6607 devices feature the industry’s first double-sided, cooled SMT package, which greatly reduces conduction and switching losses in SO-8 spacers. Buck converters featuring two IRF6607 DirectFET MOSFETs deliver 30 A per phase at 2 MHz with up to 77% efficiency and twice the current output over the industry’s best SO-8 packaged MOSFETs. A new benchmark for efficiency and power density for high frequency operation provides designers with a unique discrete solution. Will promote a new generation of Intel and AMD microprocessors to achieve greater power efficiency.